MINT! ANGSTROM EVOVAC DEPOSITION SYSTEM / THERMAL EVAPORATOR W/ VAC GLOVEBOXES

MINT! ANGSTROM EVOVAC DEPOSITION SYSTEM / THERMAL EVAPORATOR W/ VAC GLOVEBOXES

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MINT! ANGSTROM EVOVAC DEPOSITION SYSTEM / THERMAL EVAPORATOR W/ VAC GLOVEBOXES

REF # (OC2189)

 

MINT! 2008 ANGSTROM EVOVAC VACUUM DEPOSITION SYSTEM / THERMAL EVAPORATOR WITH (2) INTEGRATED VAC OMNI-LAB MODEL 101865 GLOVEBOXES AND (1) CUSTOM BOX FOR EVOVAC UN-LOADING.. PLUS VACUUM PUMPS, CRYO COMPRESSOR, MOLECULAR SIEVES SPARES, CHILLER, MANUALS, COMPUTER AND MONITOR,  AND MUCH MORE!
$300K REPLACEMENT COST. 
 
The Angstrom Engineering EVOVAC is a combination electron beam evaporator and thermal evaporator used to deposit Ti, Cr, Au, Al, Ni, Pt, Ag, Cu, Pd, Ge, Al2O3, SiO2, Ta, Mo and TiO2 with the ability to heat the substrates and do in-situ substrate cleaning using an ion mill. It is an open loop box coater with a dome that can run multiple wafers and substrates in each run.
All the e-beam evaporators in the LNF are setup using small point sources and long throw distances that lead to very directional deposition with minimal heat transfer. The “line of sight” nature means that evaporated films have poor gap fill but make the tool ideal to use for lift-off applications. The evaporators in the LNF use thin films controllers with quartz crystal monitor feedback. These controllers pre-heat the source materials with the shutter closed. Then, during deposition, the controller uses the feedback from the crystal monitor and varies the e-beam or thermal power to maintain a steady, preset deposition rate and to determine the total evaporation thickness.

Contents 
1 Announcements
2 Capabilities
3 System Overview 3.1 Hardware Details
3.2 Substrate Requirements
3.3 Material Restrictions
4 Supported Processes
5 Standard Operating Procedure
6 Checkout Procedure
7 Maintenance 7.1 Tool Pumping Performance
7.2 Process Characterization
7.3 Power Bump Recovery

Announcements
6/15/18 Updated deposition tables and available films.
Needs detailed SOP - expect by Fall 2018
Capabilities
Multi-wafer lift-off evaporator Medium deposition rate (1-5 Å/sec) metal and dielectric films on multiple wafers
Designed for low heat transfer and minimal sidewall coverage for liftoff applications
Stacks of multiple films can be run

System Overview
Hardware Details
Cryo-pumped box coater capable of low 10-7 Torr base pressure in 1 hr of pumping
Reactive gasses or heating up to 250C.
8x15cc pocket E-beam gun and 2 thermal sources to allow 10 different materials to be deposited in one run
Large distance from source and curved substrate dome designed for lift-off applications
Dome rotation and curved uniformity plate to allow for better uniformity
Substrate Requirements
2”, 3”, 4” and 6” wafer holders available as well as clip fixtures for smaller pieces
Tool holds 4x4” or 4x6” wafers or 4x6" fixtures.
Material Restrictions
The Angstrom Engineering Evovac Evaporator is designated as a Metals class tool. Below is a list of approved materials for the tool. Approved means the material is allowed in the tool under normal circumstances. If a material is not listed, please create a helpdesk ticket or email info@lnf.umich.edu for any material requests or questions.
Approved materials
 
  • Dielectric##Aluminum Oxide
  • ##Fused Silica
  • ##Pyrex
  • ##Silicon Oxide/Nitride/Poly (Clean thermal, LPCVD)
  • ##Silicon Dioxide/Nitride (clean LTO)
  • ##Silicon Dioxide (S6T1 dirty thermal)
  • ##Silicon Dioxide (Sputtered)
  • ##Silicon Oxide/Nitride/Amorphous (P5000)
  • ##Silicon Oxide/Nitride (GSI)
  • ##Silicon Oxide/Nitride/Amorphous (Plasmatherm)
  • ##Titanium Dioxide
  • ##Tantalum Oxide
  •  Semiconductor##Silicon
  • ##In-situ doped Poly-Si (n type)
  • ##In-situ doped Poly-Si (p type)
  • ##Silicon Dioxide/Poly (Dirty LPCVD/LTO S6T3-4)
  • ##Germanium
  • ##Aluminum Nitride
  • ##Gallium Oxide
  •  Metal##Chrome
  • ##Nickel
  • ##Nickel Chrome
  • ##Gold
  • ##Platinum
  • ##Silver
  • ##Tantalum
  • ##Titanium
  • ##Tungsten
  • ##Tungsten/Titanium
  • ##Aluminum
  • ##Copper
  • ##Iron
  • ##Indium
  • ##Iridium
  • ##Moly
  • ##Palladium
  • ##Tin
  • ##Zinc
  • ##Indium Tin Oxide
  • ##Zinc Oxide
  •  Polymer##KMPR
  • ##PDMS
  • ##Polyimide
  • ##SPR 220
  • ##SU-8
  • ##PR - 1800
  • ##PR 9260
  • ##Parylene
Supported Processes
Angstrom Engineering Films:

Material
  • E-beam Pocket
  • E-beam Max thickness
  • E-beam Max Deposition Rate
  • Thermal Max thickness
  • Thermal Deposition Rate
  • Titanium (Ti)  1  1 µm  10 Å/sec  TBD  TBD  
  • Chromium (Cr)  2  5000 Å  5 Å/sec  N/A  N/A  
  • Nickel Ni  3  5000 Å  5 Å/sec  N/A  N/A  
  • Gold (Au)  4  1 µm  7 Å/sec  TBD  TBD  
  • Aluminum (Al)  5  1 µm  10 Å/sec  2000 Å  2 Å/sec  
  • Platinum (Pt)  6  2000 Å  5 Å/sec  N/A  N/A  
  • Palladium Pd  6  5000 Å  5 Å/sec  200 Å  1 Å/sec  
  • Silver Ag  7  1 µm  10 Å/sec  2000 Å  2 Å/sec  
  • Copper Cu  7 or 8  1 µm  5 Å/sec  200 Å  1 Å/sec  
  • Tantalum Ta  7  5000 Å  3 Å/sec  N/A  N/A  
  • Molybdenum Mo  7  500 Å  1 Å/sec  N/A  N/A  
  • GermaniumGe  8  5000 Å  5 Å/sec  N/A  N/A  
  • Alumina Al2O3  8  2000 Å  5 Å/sec  N/A  N/A  
  • Silicon Dioxide SiO2  8  5000 Å  5 Å/sec  N/A  N/A  
  • Titanium Dioxide TiO2  7 or 8  5000 Å  5 Å/sec  N/A  N/A 

 

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